2n2222 transistor7/6/2023 ![]() ![]() However one important thing to notice is the Base resistor a.k.a current limiting resistor. This transistor will make it forward biased and thus closes the connection between collector and emitter. The Base-Emitter voltage of this transistor is 6V so you just have to supply this voltage across the base and emitter of the transistor to induce a base current into the transistor. This transistor like all can be used either as a switch or as an amplifier. So if you looking for an NPN transistor that could switch loads of higher current, then 2N2222 might the right choice for your project. 2N2222 can allow collector current upto 800mA and also has power dissipation of 652mW which can be used to drive larger loads than compared with BC547. But there are two important features that distinguish both. The 2N2222 transistor is very much similar to the commonly used NPN transistor BC547. When base current is removed the transistor becomes fully off, this stage is called as the Cut-off Region and the Base Emitter voltage could be around 660 mV. This stage is called Saturation Region and the typical voltage allowed across the Collector-Emitter (V CE) or Base-Emitter (V BE) could be 200 and 900 mV respectively. When this transistor is fully biased, then it can allow a maximum of 800mA to flow across the collector and emitter. To bias a transistor we have to supply current to base pin, this current (I B) should be limited to 5mA. The maximum amount of current that could flow through the Collector pin is 800mA, hence we cannot connect loads that consume more than 800mA using this transistor. 2N2222A has a gain value of 110 to 800, this value determines the amplification capacity of the transistor. 2N2222 Brief DescriptionĢN2222 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. Note: Complete Technical Details can be found in the 2N2222A datasheet, given at the end of this page. High power and current handling capabilityĭetailed Specifications:- Transistor Polarity.If you are designing a PCD or Perf board with this component then the following picture from the Datasheet will be useful to know its package type and dimensions. Amplifier modules like Audio amplifiers, signal Amplifier etc.Driver Modules like Relay Driver, LED driver etc.When uses as an Amplifier the DC current gain of the Transistor can be calculated by using the below formulaeĭC Current Gain = Collector Current (I C) / Base Current (I B) Of the above types common emitter type is the popular and mostly used configuration. Some of the configurations used in amplifier circuits are It can amplify power, voltage and current at different configurations. ![]() The value of I B should not exceed mA.Ī Transistors acts as an Amplifier when operating in Active Region. Where, the value of V BE should be 5V for BC547 and the Base current (I B depends on the Collector current (I C). The value of this resistor (R B) can be calculated using below formulae. Anything more than 5mA will kill the Transistor hence a resistor is always added in series with base pin. ![]() As mentioned the biasing current should maximum of 5mA. As discussed a transistor will act as an Open switch during Forward Bias and as a Closed switch during Reverse Bias, this biasing can be achieved by supplying the required amount of current to the base pin. When a transistor is used as a switch it is operated in the Saturation and Cut-Off Region as explained above. When this transistor is fully biased then it can allow a maximum of 100mA to flow across the collector and emitter. The maximum amount of current that could flow through the Collector pin is 100mA, hence we cannot connect loads that consume more than 100mA using this transistor. Note: Complete Technical Details can be found at the BC547 datasheet given at the end of this page.īC549, BC636, BC639, 2N2222 TO-92, 2N2222 TO-18, 2N2369, 2N3055, 2N3904, 2N3906, 2SC5200īC547 transistor has a gain value of 110 to 800, this value determines the amplification capacity of the transistor.
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